Magnetic and structural properties of Co2MnSi based Heusler compound
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چکیده
منابع مشابه
Direct observation of half-metallicity in the Heusler compound Co2MnSi
Ferromagnetic thin films of Heusler compounds are highly relevant for spintronic applications owing to their predicted half-metallicity, that is, 100% spin polarization at the Fermi energy. However, experimental evidence for this property is scarce. Here we investigate epitaxial thin films of the compound Co2MnSi in situ by ultraviolet-photoemission spectroscopy, taking advantage of a novel mul...
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Magnetically driven actuator materials, such as the ternary and intermetallic Heusler alloys with composition X2YM, are studied within the density-functional theory (DFT) with the generalized gradient approximation (GGA) for the electronic exchange and correlation. The geometrical and electronic structures for the magnetic L21 structure are calculated. The structures and magnetic moments at equ...
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In this study, the improvement of the magnetic properties of Co2FeSi Heusler compound was followed by the utilization of different experimental synthesizing procedures. Comparing the crystal structure showed that the milled samples had a higher crystalline order than the arc-melted ones. Annealing of the milled sample improved the crystalline order, resulting in the highest saturation magnetiza...
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We report the deposition of thin Co 2 FeSi films by RF magnetron sputtering. Epitaxial (100)-oriented and L2 1 ordered growth is observed for films grown on MgO (100) substrates. (110)-oriented films on Al 2 O 3 (11 ¯ 20) show several epitaxial domains in the film plane. Investigation of the magnetic properties reveals a saturation magnetization of 5.0 µ B /fu at low temperatures. The temperatu...
متن کاملEffect of defects in Heusler alloy thin films on spin-dependent tunnelling characteristics of Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe magnetic tunnel junctions.
Fully epitaxial magnetic tunnel junctions (MTJs) with Co-based Heusler alloy Co(2)MnSi electrodes and a MgO tunnel barrier were fabricated with various values of Mn composition α for Co(2)Mn(α)Si in Co(2)Mn(α)Si/MgO/Co(2)Mn(α)Si MTJs. The tunnel magnetoresistance (TMR) ratios at both 4.2 K and room temperature (RT) increased systematically with increasing α in Co(2)Mn(α)Si electrodes from Mn-de...
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ژورنال
عنوان ژورنال: Journal of Alloys and Compounds
سال: 2019
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2018.12.018